The University of New South Wales

Improvements in numerical modelling of highly injected crystalline silicon solar cells

Authors

Pietro P. Altermatt, Ronald A. Sinton and Gernot Heiser

    School of Computer Science and Engineering
    UNSW,
    Sydney 2052, Australia

Abstract

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00*10^10cm^-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high- injection experiments can be described consistently with the revised value of ni, if free-carrier induced BGN is included, and that such BGN is an important e!ect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

BibTeX Entry

  @article{Altermatt_SH_01,
    journal          = {Solar Energy Materials and Solar Cells},
    volume           = {65},
    author           = {Pietro P. Altermatt and Ronald A. Sinton and Gernot Heiser},
    title            = {Improvements in numerical modelling of highly injected crystalline silicon solar cells},
    pages            = {95-103},
    year             = {2001}
  }

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