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Three dimensional transient simulation of complex silicon devices

Authors

Paolo Conti, Gernot Heiser and Wolfgang Fichtner

    School of Computer Science and Engineering
    UNSW,
    Sydney 2052, Australia

Abstract

We present a general-purpose program for the simulation of semiconductor devices in three dimensions. This program solves the Poisson and continuity equations in stady-state and transient conditions. The implemented grid allocation scheme allows for spatial grid adaption in all directions. The linear systems are solved using predonditioned conjugate gradient-like methods. We describe the investigation of parasitic latchup in a CMOS structiore and the turn-off of a bipolar transistor with our program. Transsient simulations on meshes with several tens of thousands of poits can be performed within hours on a supercomputer.

BibTeX Entry

  @article{Conti_HF_90,
    author           = {Paolo Conti and Gernot Heiser and Wolfgang Fichtner},
    journal          = {Japanese Journal of Applied Physics},
    pages            = {L 2271--2274},
    paperUrl         = {https://iopscience.iop.org/article/10.1143/JJAP.29.L2271},
    title            = {Three Dimensional Transient Simulation of Complex Silicon Devices},
    volume           = {29},
    year             = {1990}
  }

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