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Numerical simulation of electron-beam-induced current near a silicon grain boundary and impact of a p-n junction space charge region


Richard Corkish, Pietro P. Altermatt and Gernot Heiser

    School of Computer Science and Engineering
    Sydney 2052, Australia


Three-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical silicon grain boundary are demonstrated. They are compared with an analytical model which excludes the effect of carrier generation other than in the bulk base region of a solar cell structure. We demonstrate that in a wide range of solar cell structures recombination in the space charge region (SCR) significantly affects the EBIC results and hence needs to be included in the data evaluation. Apart from these findings, simulations of a realistic silicon solar cell structure (thick emitter, field-dependent mobility, etc.) are demonstrated.

BibTeX Entry

    address          = {Sapporo, Japan},
    author           = {Richard Corkish and Pietro P. Altermatt and Gernot Heiser},
    booktitle        = {11th International Photovoltaic Science and Engineering Conference Digest of Technical Papers},
    month            = sep,
    paperUrl         = {},
    title            = {Numerical Simulation of Electron-Beam-Induced Current Near a Silicon Grain Boundary and Impact of a
                        {p-n} Junction Space Charge Region},
    year             = {1999}