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Study of 3-D effects in BOX isolation technologies

Authors

Matthew Noell, Gernot Heiser, Steve Poon and Marius Orlowski

    School of Computer Science and Engineering
    UNSW,
    Sydney 2052, Australia

Abstract

This paper reports on three-dimensional simulation of BOX isolation technologies in order to quantify the leakage currents due to the contribution of the lateral and vertical parasitic MOSFETs formed in conjunction with trench isolation. A new mode of leakage current cuased by intrinsic 3-D effects is described which may pose serious problems for future scaling of the minimum n+ to p+ spacing.

BibTeX Entry

  @inproceedings{Noell_HPO_91,
    address          = {Zurich, Switzerland},
    author           = {Matthew Noell and Gernot Heiser and Steve Poon and Marius Orlowski},
    booktitle        = {Proceedings of the 4th International Conference on Simulation of Semiconductor Devices and Processes},
    pages            = {331--340},
    publisher        = {Hartung-Gorre Verlag, Konstanz, Germany},
    title            = {Study of 3-{D} Effects in {BOX} Isolation Technologies},
    year             = {1991}
  }

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