The University of New South Wales

Study of 3-D effects in BOX isolation technologies

Authors

Matthew Noell, Gernot Heiser, Steve Poon and Marius Orlowski

Motorola
ETH Zurich

Abstract

This paper reports on three-dimensional simulation of BOX isolation technologies in order to quantify the leakage currents due to the contribution of the lateral and vertical parasitic MOSFETs formed in conjunction with trench isolation. A new mode of leakage current cuased by intrinsic 3-D effects is described which may pose serious problems for future scaling of the minimum n+ to p+ spacing.

BibTeX Entry

  @inproceedings{Noell_HPO_91,
    publisher        = {Hartung-Gorre Verlag, Konstanz, Germany},
    booktitle        = {Proceedings of the 4th International Conference on Simulation of Semiconductor Devices and Processes},
    author           = {Matthew Noell and Gernot Heiser and Steve Poon and Marius Orlowski},
    title            = {Study of 3-{D} Effects in {BOX} Isolation Technologies},
    pages            = {331--340},
    address          = {Zurich, Switzerland},
    year             = {1991}
  }

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