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Grain boundary modeling and characterisation of thin-film silicon solar cells


Alistair B. Sproul, Sean E. Edmiston, T. Puzzer, G. Heiser, Stuart R. Wenham, Martin A. Green and Trevour Young

    School of Computer Science and Engineering
    Sydney 2052, Australia


An analytical model is developed to describe recombination currents arising from recombination at grain boundaries (GBs) in the depletion region of a p-n junction solar cell. Grain boundaries are modeled as having a single energy level in the energy gap, and partial occupancy of these states gives rise to a charge on the GB. The analytical model is compared to a complete numerical simulation package (DESSIS) and found to be in good agreement. Additionally, cross sectional EBlC images of a multilayer device containing vertical GBs are presented. Results derived from an analytical model are compared qualitatively to the experimental data and found to give good agreement.

BibTeX Entry

    month            = may,
    organization     = {IEEE},
    booktitle        = {Proceedings of the 25th IEEE Photovoltaic Specialists Conference},
    author           = {Alistair B. Sproul and Sean E. Edmiston and T. Puzzer and G. Heiser and Stuart R. Wenham and Martin
                        A. Green and Trevour Young},
    year             = {1996},
    address          = {Washington, DC, USA},
    pages            = {549--552},
    title            = {Grain Boundary Modeling and Characterisation of Thin-Film Silicon Solar Cells}